SQ4050EY-T1_GE3 Vishay / Siliconix
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Technische Details SQ4050EY-T1_GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W, Kind of package: reel; tape, Mounting: SMD, Drain-source voltage: 40V, Drain current: 19A, On-state resistance: 15mΩ, Type of transistor: N-MOSFET, Power dissipation: 6W, Polarisation: unipolar, Gate charge: 51nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 75A, Case: SO8, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote SQ4050EY-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SQ4050EY-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 40V Drain current: 19A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SQ4050EY-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 40V Drain current: 19A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Case: SO8 |
Produkt ist nicht verfügbar |