SQJB70EP-T1_GE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.84 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.76 EUR |
| 9000+ | 0.75 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJB70EP-T1_GE3 Vishay / Siliconix
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 4nC, On-state resistance: 95mΩ, Drain current: 6.5A, Power dissipation: 9W, Gate-source voltage: ±20V, Drain-source voltage: 100V, Case: PowerPAK® SO8.
Weitere Produktangebote SQJB70EP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SQJB70EP-T1_GE3 | VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Gate charge: 4nC On-state resistance: 95mΩ Drain current: 6.5A Power dissipation: 9W Gate-source voltage: ±20V Drain-source voltage: 100V Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQJB70EP-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 95mΩ
Drain current: 6.5A
Power dissipation: 9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: PowerPAK® SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 95mΩ
Drain current: 6.5A
Power dissipation: 9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: PowerPAK® SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH