SSM6K403TU,LF(T TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 281 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 264+ | 0.27 EUR |
| 281+ | 0.26 EUR |
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Technische Details SSM6K403TU,LF(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 4.2A, Power dissipation: 0.5W, Case: UF6, Gate-source voltage: ±10V, On-state resistance: 66mΩ, Mounting: SMD, Gate charge: 16.8nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SSM6K403TU,LF(T nach Preis ab 0.26 EUR bis 0.4 EUR
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SSM6K403TU,LF(T | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±10V On-state resistance: 66mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6K403TU,LF(T | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 4.2A 6-Pin UF T/R |
Produkt ist nicht verfügbar |