STFI20NM65N

STFI20NM65N STMicroelectronics


en.DM00103790.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.34 EUR
100+ 7.68 EUR
500+ 6.54 EUR
1000+ 5.51 EUR
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Technische Details STFI20NM65N STMicroelectronics

Description: MOSFET N-CH 650V 15A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I²Pak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAKFP (TO-281), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V.

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STFI20NM65N STFI20NM65N Hersteller : STMicroelectronics 1016577190233111dm00103790.pdf Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) I2PAKFP Tube
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