STFI6N62K3 STMicroelectronics

Description: MOSFET N CH 620V 5.5A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-281 (I2PAKFP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V.