STFI6N65K3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A I2PAKFP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
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Technische Details STFI6N65K3 STMicroelectronics
Description: MOSFET N-CH 650V 5.4A I2PAKFP, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I2PAK, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-281 (I2PAKFP), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc).