STG3P2M10N60B STMicroelectronics
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Technische Details STG3P2M10N60B STMicroelectronics
Description: IGBT MOD 600V 19A 56W SEMITOP2, Packaging: Bulk, Package / Case: SEMITOP®2, Mounting Type: Chassis Mount, Input: Single Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A, NTC Thermistor: No, Supplier Device Package: SEMITOP®2, Current - Collector (Ic) (Max): 19 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 56 W, Current - Collector Cutoff (Max): 10 µA, Input Capacitance (Cies) @ Vce: 720 pF @ 25 V.
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STG3P2M10N60B | Hersteller : STMicroelectronics |
Description: IGBT MOD 600V 19A 56W SEMITOP2 Packaging: Bulk Package / Case: SEMITOP®2 Mounting Type: Chassis Mount Input: Single Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A NTC Thermistor: No Supplier Device Package: SEMITOP®2 Current - Collector (Ic) (Max): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 56 W Current - Collector Cutoff (Max): 10 µA Input Capacitance (Cies) @ Vce: 720 pF @ 25 V |
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