STG3P2M10N60B STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT MOD 600V 19A 56W SEMITOP2
Input Capacitance (Cies) @ Vce: 720 pF @ 25 V
Current - Collector Cutoff (Max): 10 µA
Power - Max: 56 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Supplier Device Package: SEMITOP®2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Single Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: SEMITOP®2
Packaging: Bulk
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Technische Details STG3P2M10N60B STMicroelectronics
Description: IGBT MOD 600V 19A 56W SEMITOP2, Input Capacitance (Cies) @ Vce: 720 pF @ 25 V, Current - Collector Cutoff (Max): 10 µA, Power - Max: 56 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 19 A, Supplier Device Package: SEMITOP®2, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Single Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: SEMITOP®2, Packaging: Bulk.