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STG3P2M10N60B

STG3P2M10N60B STMicroelectronics


cd00112098.pdf Hersteller: STMicroelectronics
Trans IGBT Module N-CH 600V 19A 56000mW 8-Pin SEMITOP 2 Box
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Technische Details STG3P2M10N60B STMicroelectronics

Description: IGBT MOD 600V 19A 56W SEMITOP2, Packaging: Bulk, Package / Case: SEMITOP®2, Mounting Type: Chassis Mount, Input: Single Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A, NTC Thermistor: No, Supplier Device Package: SEMITOP®2, Current - Collector (Ic) (Max): 19 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 56 W, Current - Collector Cutoff (Max): 10 µA, Input Capacitance (Cies) @ Vce: 720 pF @ 25 V.

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STG3P2M10N60B STG3P2M10N60B Hersteller : STMicroelectronics en.CD00112098.pdf Description: IGBT MOD 600V 19A 56W SEMITOP2
Packaging: Bulk
Package / Case: SEMITOP®2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
NTC Thermistor: No
Supplier Device Package: SEMITOP®2
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 56 W
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 720 pF @ 25 V
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