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STGB10NB60ST4

STGB10NB60ST4 STMicroelectronics


616cd00046342.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(2+Tab) D2PAK T/R
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Technische Details STGB10NB60ST4 STMicroelectronics

Description: IGBT 600V 29A 80W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 700ns/1.2µs, Switching Energy: 600µJ (on), 5mJ (off), Test Condition: 480V, 10A, 1kOhm, 15V, Gate Charge: 33 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 29 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 80 W.

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STGB10NB60ST4 STGB10NB60ST4 Hersteller : STMicroelectronics en.CD00046342.pdf Description: IGBT 600V 29A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
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