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STGB3NB60KDT4

STGB3NB60KDT4 STMicroelectronics


1307cd00011156.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 10A 50000mW 3-Pin(2+Tab) D2PAK T/R
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Technische Details STGB3NB60KDT4 STMicroelectronics

Description: IGBT 600V 10A 50W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 14ns/33ns, Switching Energy: 30µJ (on), 58µJ (off), Test Condition: 480V, 3A, 10Ohm, 15V, Gate Charge: 14 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 50 W.

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STGB3NB60KDT4 STGB3NB60KDT4 Hersteller : STMicroelectronics STGx3NB60K(KD,KDFP).pdf Description: IGBT 600V 10A 50W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 30µJ (on), 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
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