STQ3NK50ZR-AP STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 500MA TO92-3
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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Technische Details STQ3NK50ZR-AP STMicroelectronics
Description: MOSFET N-CH 500V 500MA TO92-3, Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB), Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 3W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.