STWA68N65DM6AG STMicroelectronics
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Technische Details STWA68N65DM6AG STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A, Kind of package: tube, Application: automotive industry, Mounting: THT, Drain-source voltage: 650V, Drain current: 46A, On-state resistance: 39mΩ, Type of transistor: N-MOSFET, Power dissipation: 480W, Polarisation: unipolar, Gate charge: 118nC, Technology: MDmesh™ DM6, Kind of channel: enhanced, Gate-source voltage: ±25V, Pulsed drain current: 280A, Case: TO247, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STWA68N65DM6AG
Foto | Bezeichnung | Hersteller | Beschreibung |
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STWA68N65DM6AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 46A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 118nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 280A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA68N65DM6AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 46A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 118nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 280A Case: TO247 |
Produkt ist nicht verfügbar |