Technische Details SUD50N03-11-E3 Vishay
Description: MOSFET N-CH 30V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Power Dissipation (Max): 7.5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V.
Weitere Produktangebote SUD50N03-11-E3
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SUD50N03-11-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Power Dissipation (Max): 7.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V |
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