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T2N7002AK,LM(T

T2N7002AK,LM(T TOSHIBA


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8CBE3DECB842C0C4&compId=T2N7002AK.pdf?ci_sign=cab9124984377baf0929b84577e05f6d1c23149f Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.76A
Version: ESD
Gate charge: 0.35nC
Anzahl je Verpackung: 30000 Stücke
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Technische Details T2N7002AK,LM(T TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.2A, Power dissipation: 0.32W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 3.2Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 0.76A, Version: ESD, Gate charge: 0.35nC, Anzahl je Verpackung: 30000 Stücke.

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T2N7002AK,LM(T T2N7002AK,LM(T Hersteller : TOSHIBA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8CBE3DECB842C0C4&compId=T2N7002AK.pdf?ci_sign=cab9124984377baf0929b84577e05f6d1c23149f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.76A
Version: ESD
Gate charge: 0.35nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH