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T2N7002BK,LM(T

T2N7002BK,LM(T TOSHIBA

T2N7002BK.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.39nC
Power dissipation: 0.32W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 1.75Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 19517 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
642+0.11 EUR
1112+0.064 EUR
1266+0.056 EUR
1437+0.05 EUR
1598+0.045 EUR
1767+0.04 EUR
2067+0.035 EUR
2513+0.028 EUR
3000+0.025 EUR
Mindestbestellmenge: 642
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Technische Details T2N7002BK,LM(T TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23, Polarisation: unipolar, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET, Mounting: SMD, Kind of package: reel; tape, Case: SOT23, Gate charge: 0.39nC, Power dissipation: 0.32W, Drain current: 0.4A, Pulsed drain current: 1.2A, On-state resistance: 1.75Ω, Gate-source voltage: ±20V, Drain-source voltage: 60V.