TC7SZ00FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 3544 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
33+ | 0.81 EUR |
37+ | 0.71 EUR |
100+ | 0.46 EUR |
250+ | 0.38 EUR |
500+ | 0.3 EUR |
1000+ | 0.23 EUR |
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Technische Details TC7SZ00FE,LM Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP ESV, Packaging: Cut Tape (CT), Package / Case: SOT-553, Mounting Type: Surface Mount, Logic Type: NAND Gate, Operating Temperature: -40°C ~ 85°C, Voltage - Supply: 1.65V ~ 5.5V, Current - Output High, Low: 32mA, 32mA, Number of Inputs: 2, Supplier Device Package: ESV, Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF, Number of Circuits: 1, Current - Quiescent (Max): 2 µA.