Produkte > TOSHIBA > TK16N60W5,S1VF(S

TK16N60W5,S1VF(S TOSHIBA

TK16N60W5.pdf Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details TK16N60W5,S1VF(S TOSHIBA

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 15.8A, Pulsed drain current: 63.2A, Power dissipation: 130W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.23Ω, Mounting: THT, Gate charge: 43nC, Kind of package: tube, Kind of channel: enhancement.