Technische Details TK16N60W5,S1VF(S Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 15.8A, Pulsed drain current: 63.2A, Power dissipation: 130W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.23Ω, Mounting: THT, Gate charge: 43nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TK16N60W5,S1VF(S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TK16N60W5,S1VF(S | Hersteller : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 63.2A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TK16N60W5,S1VF(S | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 63.2A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |