Produkte > TOSHIBA > TK31V60W5,LVQ(S
TK31V60W5,LVQ(S

TK31V60W5,LVQ(S TOSHIBA

TK31V60W5.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN8x8; 8x8mm
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 105nC
Dimensions: 8x8mm
On-state resistance: 109mΩ
Gate-source voltage: ±30V
Drain current: 30.8A
Power dissipation: 240W
Drain-source voltage: 600V
Case: DFN8x8
Kind of channel: enhancement
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Technische Details TK31V60W5,LVQ(S TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN8x8; 8x8mm, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 105nC, Dimensions: 8x8mm, On-state resistance: 109mΩ, Gate-source voltage: ±30V, Drain current: 30.8A, Power dissipation: 240W, Drain-source voltage: 600V, Case: DFN8x8, Kind of channel: enhancement.