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TK39N60X,S1F(S

TK39N60X,S1F(S TOSHIBA


TK39N60X.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 85nC
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Lieferzeit 14-21 Tag (e)
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11+7.04 EUR
12+6.22 EUR
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Technische Details TK39N60X,S1F(S TOSHIBA

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 38.8A, Power dissipation: 270W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 55mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 85nC.