Technische Details TK65G10N1,RQ(S Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 136A, Pulsed drain current: 283A, Power dissipation: 156W, Case: D2PAK, Gate-source voltage: ±20V, On-state resistance: 3.8mΩ, Mounting: SMD, Gate charge: 81nC, Kind of channel: enhanced, Anzahl je Verpackung: 1000 Stücke.
Weitere Produktangebote TK65G10N1,RQ(S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| TK65G10N1,RQ(S | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 283A Power dissipation: 156W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| TK65G10N1,RQ(S | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 283A Power dissipation: 156W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |