TP44220HB Tagore Technology
Hersteller: Tagore Technology
Description: GANFET 2N-CH 650V 30QFN
Supplier Device Package: 30-QFN (8x10)
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 30-PowerWFQFN
Packaging: Tray
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 400V
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Technische Details TP44220HB Tagore Technology
Description: GANFET 2N-CH 650V 30QFN, Supplier Device Package: 30-QFN (8x10), Vgs(th) (Max) @ Id: 2.5V @ 5.5mA, Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 30-PowerWFQFN, Packaging: Tray, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 6V, Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 400V.