TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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Technische Details TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP (5.5x6.0), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V.
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TPC8035-H(TE12L,QM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 18A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP (5.5x6.0) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
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