Technische Details TPC8207(TE12L,Q) Toshiba
Description: MOSFET 2N-CH 20V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: 8-SOP (5.5x6.0).
Weitere Produktangebote TPC8207(TE12L,Q)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TPC8207(TE12L,Q) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 20V 6A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: 8-SOP (5.5x6.0) |
Produkt ist nicht verfügbar |