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TPC8405(TE12L,Q,M)

TPC8405(TE12L,Q,M) Toshiba


tpc8405_en_datasheet_090929.pdf Hersteller: Toshiba
Trans MOSFET N/P-CH Si 30V 6A/4.5A 8-Pin SOP T/R
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Technische Details TPC8405(TE12L,Q,M) Toshiba

Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V, Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SOP (5.5x6.0), Part Status: Obsolete.

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TPC8405(TE12L,Q,M) TPC8405(TE12L,Q,M) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=1505&prodName=TPC8405 Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8405 (TE12L,Q,M) TPC8405 (TE12L,Q,M) Hersteller : Toshiba MOSFET
Produkt ist nicht verfügbar