TPCC8136.LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.4A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details TPCC8136.LQ Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.4A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 700mW (Ta), 18W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).