TPCF8A01(TE85L) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 20V 3A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
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Technische Details TPCF8A01(TE85L) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A VS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 330mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: VS-8 (2.9x1.5), Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V.