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TPCP8303,LF(CM

TPCP8303,LF(CM Toshiba


tpcp8303_datasheet_en_20131101.pdf Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 3.8A 8-Pin PS T/R
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Technische Details TPCP8303,LF(CM Toshiba

Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.8A, Power dissipation: 1.48W, Case: PS8, Gate-source voltage: ±8V, On-state resistance: 41mΩ, Mounting: SMD, Gate charge: 10nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.

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TPCP8303,LF(CM Hersteller : TOSHIBA TPCP8303.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.48W
Case: PS8
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TPCP8303,LF(CM Hersteller : TOSHIBA TPCP8303.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.48W
Case: PS8
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar