Technische Details TPCP8303,LF(CM Toshiba
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.8A, Power dissipation: 1.48W, Case: PS8, Gate-source voltage: ±8V, On-state resistance: 41mΩ, Mounting: SMD, Gate charge: 10nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TPCP8303,LF(CM
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TPCP8303,LF(CM | Hersteller : TOSHIBA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Case: PS8 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TPCP8303,LF(CM | Hersteller : TOSHIBA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Case: PS8 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |