TPD3215M Transphorm

Description: GANFET 2N-CH 600V 70A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Power - Max: 470W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V, Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V, Supplier Device Package: Module, Part Status: Obsolete.