Produkte > TOSHIBA > TPH2R306NH,L1Q(M
TPH2R306NH,L1Q(M

TPH2R306NH,L1Q(M TOSHIBA

TPH2R306NH.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details TPH2R306NH,L1Q(M TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 130A, Power dissipation: 78W, Case: SOP8A, Gate-source voltage: ±20V, On-state resistance: 4.7mΩ, Mounting: SMD, Gate charge: 72nC, Kind of package: reel; tape, Kind of channel: enhancement.