Technische Details TPH4R50ANH,L1Q(M Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 78W; SOP8A, Mounting: SMD, Case: SOP8A, Kind of package: reel; tape, Power dissipation: 78W, Drain-source voltage: 100V, Drain current: 60A, On-state resistance: 3.7mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 58nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote TPH4R50ANH,L1Q(M
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPH4R50ANH,L1Q(M | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 78W; SOP8A Mounting: SMD Case: SOP8A Kind of package: reel; tape Power dissipation: 78W Drain-source voltage: 100V Drain current: 60A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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TPH4R50ANH,L1Q(M | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 78W; SOP8A Mounting: SMD Case: SOP8A Kind of package: reel; tape Power dissipation: 78W Drain-source voltage: 100V Drain current: 60A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |