TSM500P02DCQ Taiwan Semiconductor Corporation

Description: MOSFET 2P-CH 20V 4.7A 6TDFN, Part Status: Active, Supplier Device Package: 6-TDFN (2x2), Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 620mW (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 800mV @ 250µA.