Technische Details TSM60N1R4CH C5G Taiwan Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK, Case: IPAK, Mounting: THT, Type of transistor: N-MOSFET, On-state resistance: 1.4Ω, Gate-source voltage: ±30V, Power dissipation: 38W, Gate charge: 7.7nC, Polarisation: unipolar, Drain current: 3.3A, Kind of channel: enhanced, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TSM60N1R4CH C5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TSM60N1R4CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK Case: IPAK Mounting: THT Type of transistor: N-MOSFET On-state resistance: 1.4Ω Gate-source voltage: ±30V Power dissipation: 38W Gate charge: 7.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM60N1R4CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; IPAK Case: IPAK Mounting: THT Type of transistor: N-MOSFET On-state resistance: 1.4Ω Gate-source voltage: ±30V Power dissipation: 38W Gate charge: 7.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 600V |
Produkt ist nicht verfügbar |