Technische Details TSM60N380CH C5G Taiwan Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 11A, Power dissipation: 125W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 0.38Ω, Mounting: THT, Gate charge: 20.5nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TSM60N380CH C5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TSM60N380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM60N380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |