Technische Details TSM60N380CH C5G Taiwan Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK, Mounting: THT, Polarisation: unipolar, Gate charge: 20.5nC, On-state resistance: 0.38Ω, Kind of channel: enhancement, Case: IPAK, Drain current: 11A, Power dissipation: 125W, Gate-source voltage: ±30V, Drain-source voltage: 600V, Kind of package: tube, Type of transistor: N-MOSFET.
Weitere Produktangebote TSM60N380CH C5G
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| TSM60N380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK Mounting: THT Polarisation: unipolar Gate charge: 20.5nC On-state resistance: 0.38Ω Kind of channel: enhancement Case: IPAK Drain current: 11A Power dissipation: 125W Gate-source voltage: ±30V Drain-source voltage: 600V Kind of package: tube Type of transistor: N-MOSFET |
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