TSM60N380CI C0G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
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Technische Details TSM60N380CI C0G TAIWAN SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP, Mounting: THT, Polarisation: unipolar, Gate charge: 20.5nC, On-state resistance: 0.38Ω, Kind of channel: enhancement, Case: TO220FP, Drain current: 11A, Power dissipation: 33W, Gate-source voltage: ±30V, Drain-source voltage: 600V, Kind of package: tube, Type of transistor: N-MOSFET.