Technische Details TW083N65C,S1F(S Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; 650V; 30A; 111W; TO247, Type of transistor: N-MOSFET, Drain-source voltage: 650V, Drain current: 30A, Power dissipation: 111W, Case: TO247, On-state resistance: 113mΩ, Gate charge: 28nC, Kind of channel: enhancement.
Weitere Produktangebote TW083N65C,S1F(S nach Preis ab 8.95 EUR bis 31.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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TW083N65C,S1F(S | Toshiba |
 Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247 |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| TW083N65C,S1F(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 650V; 30A; 111W; TO247 Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 30A Power dissipation: 111W Case: TO247 On-state resistance: 113mΩ Gate charge: 28nC Kind of channel: enhancement |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
|
| TW083N65C,S1F(S |
|
Hersteller: Toshiba
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 31.06 EUR |
| 10+ | 29.45 EUR |
| 20+ | 28.02 EUR |
| TW083N65C,S1F(S |
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 30A; 111W; TO247
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 111W
Case: TO247
On-state resistance: 113mΩ
Gate charge: 28nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 30A; 111W; TO247
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 111W
Case: TO247
On-state resistance: 113mΩ
Gate charge: 28nC
Kind of channel: enhancement
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 8.95 EUR |