ULN2804APG,N

ULN2804APG,N Toshiba Semiconductor and Storage


ULN2803-04APG_AFWG_11-26-12.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 8NPN DARL 50V 500MA 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 8 NPN Darlington
Type: Driver
Operating Temperature: -40°C ~ 85°C (TA)
Number of Drivers/Receivers: 8/0
Power - Max: 760mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 18-DIP
Part Status: Obsolete
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Technische Details ULN2804APG,N Toshiba Semiconductor and Storage

Description: TRANS 8NPN DARL 50V 500MA 18DIP, Packaging: Tube, Package / Case: 18-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 8 NPN Darlington, Type: Driver, Operating Temperature: -40°C ~ 85°C (TA), Number of Drivers/Receivers: 8/0, Power - Max: 760mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 18-DIP, Part Status: Obsolete.