UPA1818GR-9JG-E1-A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET P-CH 20V 10A 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-TSSOP
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 378+ | 1.28 EUR |
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Technische Details UPA1818GR-9JG-E1-A Renesas Electronics Corporation
Description: MOSFET P-CH 20V 10A 8TSSOP, Packaging: Bulk, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 15.2mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-TSSOP, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V.