UPA2352T1P-E4-A Renesas Electronics Corporation

Description: MOSFET 2N-CH 24V 4A LGA, Supplier Device Package: 4-EFLIP-LGA (1.4x1.4), Vgs(th) (Max) @ Id: 1.5V @ 1mA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4V, Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 24V, Power - Max: 750mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 4-XFLGA, Packaging: Bulk.