UPA2352T1P-E4-A Renesas Electronics Corporation


RNCCS04999-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 24V 4A LGA
Packaging: Bulk
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW (Ta)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 4-EFLIP-LGA (1.4x1.4)
auf Bestellung 315000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
650+0.76 EUR
Mindestbestellmenge: 650
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Technische Details UPA2352T1P-E4-A Renesas Electronics Corporation

Description: MOSFET 2N-CH 24V 4A LGA, Packaging: Bulk, Package / Case: 4-XFLGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 750mW (Ta), Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V, Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 4-EFLIP-LGA (1.4x1.4).