UPA2680T1E-E2-AT Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 20V 3A 6MLP
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-MLP (3x3)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 508+ | 0.97 EUR |
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Technische Details UPA2680T1E-E2-AT Renesas Electronics Corporation
Description: MOSFET N-CH 20V 3A 6MLP, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: 6-MLP (3x3), Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Bulk.