VS-1EFH01WHM3-18 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 100V 1A DO219AB, Qualification: AEC-Q101, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 16 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A.