VS-85EPF12-M4 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-85EPF12-M4 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 85A POWIRTAB, Packaging: Bulk, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 480 ns, Technology: Standard, Current - Average Rectified (Io): 85A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.