WM02DH08D WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2829 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 582+ | 0.12 EUR |
| 1374+ | 0.052 EUR |
| 1544+ | 0.046 EUR |
| 1743+ | 0.041 EUR |
| 3000+ | 0.037 EUR |
| 6000+ | 0.036 EUR |
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Technische Details WM02DH08D WAYON
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 750/-660mA, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 380/520mΩ, Mounting: SMD, Gate charge: 1/2.2nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DH08D nach Preis ab 0.041 EUR bis 0.37 EUR
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WM02DH08D | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Gate charge: 1/2.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2829 Stücke: Lieferzeit 14-21 Tag (e) |
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