Produkte > WAYON > WM02DH08D
WM02DH08D

WM02DH08D WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D298ADBDE820D6&compId=WM02DH08D.pdf?ci_sign=28e62b2ba27fa82af141b9f2530b25a3d8951001 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 1/2.2nC
auf Bestellung 2867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1345+0.053 EUR
1489+0.048 EUR
1825+0.039 EUR
1931+0.037 EUR
Mindestbestellmenge: 186
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Technische Details WM02DH08D WAYON

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 750/-660mA, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 380/520mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Gate charge: 1/2.2nC.