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WM02DH08D

WM02DH08D WAYON

WM02DH08D.pdf
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
496+0.17 EUR
1180+0.073 EUR
1313+0.064 EUR
1480+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 167 Stücke
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Technische Details WM02DH08D WAYON

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 750/-660mA, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 380/520mΩ, Mounting: SMD, Gate charge: 1/2.2nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.