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WM02DN080C

WM02DN080C WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D25A930590E0D6&compId=WM02DN080C.pdf?ci_sign=e461db1c35525e7d143d6fa7b0dbb17a4a5c4f90 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 15.5mΩ
Version: ESD
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 49A
Drain-source voltage: 20V
Drain current: 8A
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Technische Details WM02DN080C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel, Semiconductor structure: common drain, On-state resistance: 15.5mΩ, Version: ESD, Gate charge: 11nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 49A, Drain-source voltage: 20V, Drain current: 8A.