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WM02DN085C

WM02DN085C WAYON

WM02DN085C.pdf
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
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Technische Details WM02DN085C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 10.9mΩ, Drain current: 8.5A, Pulsed drain current: 56A, Gate charge: 22.1nC, Gate-source voltage: ±12V, Version: ESD, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.