Produkte > WAYON > WM02DN085C
WM02DN085C

WM02DN085C WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D261063CACC0D6&compId=WM02DN085C.pdf?ci_sign=c0f47102cdb03b3a3b7dc8a690bbaef529923f25 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
252+0.28 EUR
304+0.24 EUR
382+0.19 EUR
404+0.18 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WM02DN085C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 10.9mΩ, Drain current: 8.5A, Pulsed drain current: 56A, Gate charge: 22.1nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.