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WM02DN085C

WM02DN085C WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D261063CACC0D6&compId=WM02DN085C.pdf?ci_sign=c0f47102cdb03b3a3b7dc8a690bbaef529923f25 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
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Technische Details WM02DN085C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 8.5A, Pulsed drain current: 56A, Power dissipation: 1.56W, Case: DFN2030-6, Gate-source voltage: ±12V, On-state resistance: 10.9mΩ, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD.