WM02DN085C WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Drain current: 8.5A
Pulsed drain current: 56A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 256+ | 0.28 EUR |
| 307+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
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Technische Details WM02DN085C WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 10.9mΩ, Gate charge: 22.1nC, Drain current: 8.5A, Pulsed drain current: 56A, Gate-source voltage: ±12V, Version: ESD, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DN085C nach Preis ab 0.19 EUR bis 0.7 EUR
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WM02DN085C | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 10.9mΩ Gate charge: 22.1nC Drain current: 8.5A Pulsed drain current: 56A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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