WM02DN08D WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Drain current: 0.8A
Pulsed drain current: 3A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2589 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 582+ | 0.12 EUR |
| 1374+ | 0.052 EUR |
| 1539+ | 0.046 EUR |
| 1743+ | 0.041 EUR |
| 3000+ | 0.037 EUR |
| 6000+ | 0.036 EUR |
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Technische Details WM02DN08D WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 0.3W, Case: SOT363, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 0.25Ω, Gate charge: 1.1nC, Drain current: 0.8A, Pulsed drain current: 3A, Gate-source voltage: ±10V, Version: ESD, Drain-source voltage: 20V, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DN08D nach Preis ab 0.041 EUR bis 0.37 EUR
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WM02DN08D | Hersteller : WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Gate charge: 1.1nC Drain current: 0.8A Pulsed drain current: 3A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 2589 Stücke: Lieferzeit 14-21 Tag (e) |
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