Produkte > WAYON > WM02DN08D
WM02DN08D

WM02DN08D WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2670217B5A0D6&compId=WM02DN08D.pdf?ci_sign=053ec78552c076aca41259edf9e2959311e6f9cc Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Version: ESD
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 0.8A
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
569+0.13 EUR
1345+0.053 EUR
1498+0.048 EUR
1819+0.039 EUR
1924+0.037 EUR
Mindestbestellmenge: 186
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Technische Details WM02DN08D WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 0.3W, Case: SOT363, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 0.25Ω, Version: ESD, Gate charge: 1.1nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: 3A, Drain-source voltage: 20V, Drain current: 0.8A.