WM02DN08T WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.8A, Power dissipation: 0.27W, Case: SOT563, Gate-source voltage: ±10V, On-state resistance: 0.25Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Pulsed drain current: 3A, Gate charge: 1.1nC.