WM02DN08T WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 1.1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 550+ | 0.13 EUR |
| 920+ | 0.078 EUR |
| 1023+ | 0.07 EUR |
| 1161+ | 0.062 EUR |
| 3000+ | 0.056 EUR |
| 6000+ | 0.055 EUR |
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Technische Details WM02DN08T WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.8A, Pulsed drain current: 3A, Power dissipation: 0.27W, Case: SOT563, Gate-source voltage: ±10V, On-state resistance: 0.25Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Gate charge: 1.1nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DN08T nach Preis ab 0.062 EUR bis 0.37 EUR
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WM02DN08T | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.27W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 1.1nC |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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