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WM02DN08T

WM02DN08T WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D26CECC8F400D6&compId=WM02DN08T.pdf?ci_sign=1287f74d37080f45fe7319ee7eda57d4b8b7247b Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 1.1nC
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1250+0.057 EUR
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Technische Details WM02DN08T WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.8A, Pulsed drain current: 3A, Power dissipation: 0.27W, Case: SOT563, Gate-source voltage: ±10V, On-state resistance: 0.25Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Gate charge: 1.1nC.