Produkte > WAYON > WM02DN08T
WM02DN08T

WM02DN08T WAYON

WM02DN08T.pdf
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
521+0.14 EUR
869+0.082 EUR
968+0.074 EUR
1097+0.065 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WM02DN08T WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.8A, Pulsed drain current: 3A, Power dissipation: 0.27W, Case: SOT563, Gate-source voltage: ±10V, On-state resistance: 0.25Ω, Mounting: SMD, Gate charge: 1.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.