Produkte > WAYON > WM02DN095C
WM02DN095C

WM02DN095C WAYON

WM02DN095C.pdf
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.5A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Pulsed drain current: 60A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
208+0.4 EUR
249+0.35 EUR
264+0.32 EUR
500+0.29 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WM02DN095C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 9.5A, Power dissipation: 1.56W, Case: DFN2030-6, Gate-source voltage: ±12V, On-state resistance: 9.4mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD, Pulsed drain current: 60A.