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WM02DN095C

WM02DN095C WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D272BA1DA7E0D6&compId=WM02DN095C.pdf?ci_sign=534ee738da5243640365c24be5bcec4258a7f72e Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 9.4mΩ
Version: ESD
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 9.5A
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Technische Details WM02DN095C WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel, Semiconductor structure: common drain, On-state resistance: 9.4mΩ, Version: ESD, Gate charge: 22nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 60A, Drain-source voltage: 20V, Drain current: 9.5A.