
WM02DN110C WAYON

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
235+ | 0.3 EUR |
286+ | 0.25 EUR |
343+ | 0.21 EUR |
363+ | 0.2 EUR |
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Technische Details WM02DN110C WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 7.5mΩ, Drain current: 11A, Pulsed drain current: 70A, Gate charge: 23nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.