WM02DN50M3 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 575+ | 0.12 EUR |
| 1374+ | 0.052 EUR |
| 1520+ | 0.047 EUR |
| 1812+ | 0.039 EUR |
| 1916+ | 0.037 EUR |
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Technische Details WM02DN50M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5A, Pulsed drain current: 20A, Power dissipation: 1.5W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 27mΩ, Mounting: SMD, Gate charge: 11nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain.