Produkte > WAYON > WM02DN50M3

WM02DN50M3 WAYON



Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
544+0.15 EUR
1303+0.065 EUR
1446+0.058 EUR
1629+0.052 EUR
Mindestbestellmenge: 179 Stücke
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Technische Details WM02DN50M3 WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Drain current: 5A, Pulsed drain current: 20A, On-state resistance: 27mΩ, Gate charge: 11nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.