WM02DN560Q WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 144+ | 0.5 EUR |
| 160+ | 0.45 EUR |
| 180+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 3000+ | 0.35 EUR |
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Technische Details WM02DN560Q WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 56A, Pulsed drain current: 100A, Power dissipation: 31W, Case: DFN3030-8, Gate-source voltage: ±12V, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 27.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DN560Q nach Preis ab 0.4 EUR bis 0.84 EUR
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WM02DN560Q | Hersteller : WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 56A Pulsed drain current: 100A Power dissipation: 31W Case: DFN3030-8 Gate-source voltage: ±12V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 27.8nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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