Produkte > WAYON > WM02DN560Q
WM02DN560Q

WM02DN560Q WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D281554C09A0D6&compId=WM02DN560Q.pdf?ci_sign=dc0b0f6d6eab42ff3805c9d40ebb62cc1af281c9 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
143+0.5 EUR
159+0.45 EUR
192+0.37 EUR
203+0.35 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WM02DN560Q WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 56A, Pulsed drain current: 100A, Power dissipation: 31W, Case: DFN3030-8, Gate-source voltage: ±12V, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 27.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD.