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WM02DN560Q

WM02DN560Q WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D281554C09A0D6&compId=WM02DN560Q.pdf?ci_sign=dc0b0f6d6eab42ff3805c9d40ebb62cc1af281c9 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 5.4mΩ
Version: ESD
Gate charge: 27.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 100A
Drain-source voltage: 20V
Drain current: 56A
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Technische Details WM02DN560Q WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 31W, Case: DFN3030-8, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 5.4mΩ, Version: ESD, Gate charge: 27.8nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 100A, Drain-source voltage: 20V, Drain current: 56A.