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WM02DN560Q WAYON


WM02DN560Q.pdf
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 31W
Gate charge: 27.8nC
Polarisation: unipolar
Version: ESD
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: DFN3030-8
On-state resistance: 5.4mΩ
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Technische Details WM02DN560Q WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Mounting: SMD, Pulsed drain current: 100A, Power dissipation: 31W, Gate charge: 27.8nC, Polarisation: unipolar, Version: ESD, Drain current: 56A, Kind of channel: enhancement, Drain-source voltage: 20V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±12V, Kind of package: reel; tape, Semiconductor structure: common drain, Case: DFN3030-8, On-state resistance: 5.4mΩ.