
WM02DN60M3 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
439+ | 0.16 EUR |
731+ | 0.098 EUR |
814+ | 0.088 EUR |
991+ | 0.072 EUR |
1047+ | 0.068 EUR |
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Technische Details WM02DN60M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 20mΩ, Gate charge: 12nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 25A, Drain-source voltage: 20V, Drain current: 6A.