WM02DN60M3 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 451+ | 0.16 EUR |
| 754+ | 0.095 EUR |
| 837+ | 0.086 EUR |
| 944+ | 0.076 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM02DN60M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 20mΩ, Drain current: 6A, Pulsed drain current: 25A, Gate charge: 12nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.